Figure 6
From: Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors
PDPP3T split-gate ambipolar TFTs and their output characteristics as a function of vacuum annealing condition. (a) Schematic of device structure. (b) Top view optical image. The length of the scale bar is 200 μm (black). Measured output characteristics at (c) TI = 100 °C. (d) TII = 140 °C. (e) TIII = 180 °C. (f) TIV = 200 °C. Unipolar p-type operation at VSIDE = −60 V. Unipolar n-type operation at VSIDE = 60 V.
