Figure 8
From: Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors
Impact of the vacuum annealing on the transistor electrical properties. (a) Extracted saturation mobilities as a function of vacuum annealing condition and (b) Turn-on voltage. (c) Polarity balance: defined as electron/hole current ratio at |VG| = 80 V. |VD| = 40 V, and |VSIDE| = 60 V. (d) Extracted channel resistance of the PDPP3T split-gate ambipolar TFTs. Orange diamond: TI = 100 °C. Red circle: TII = 140 °C. Blue triangle: TIII = 180 °C. Green square TIV = 200 °C.
