Figure 3
(a) Simulated capacitive CELIV current transients for a device with a step profile with different steps where \({N}_{p}(x)={N}_{p1}\) for 0 < x < d 1 , \({N}_{p}(x)={N}_{p2}\) for d 1 < x < d, where d 1 = 250 nm and N p1 = 2 × 1022 m−3. (b) The carrier-density profiles as extracted from the CELIV current transients, using Eq. (11) and Eq. (10), are depicted by the colored lines. For comparison, the actual quasi-equilibrium hole densities p(x), simulated at V = −V bi , are depicted by the dashed lines; the corresponding input concentration of ionized dopants N p (x) is indicated by the thin black lines.
