Table 1 The dopant to host weight % (wt %), dopant concentration, measured free-carrier concentration, and doping efficiency of the doped layers used.

From: Doping-induced carrier profiles in organic semiconductors determined from capacitive extraction-current transients

Dopant to host wt %

Dopant conc. [m−3]

Free carrier conc. [m−3]

Doping efficiency [%]

0.2

1 × 1024

4.2 × 1023

42%

0.4

2.1 × 1024

6.0 × 1023

29%

1.0

5.2 × 1024

1.0 × 1024

19%

2.0

1.1 × 1025

N/A

N/A

4.0

2.1 × 1025

N/A

N/A

10.0

5.7 × 1025

N/A

N/A

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