Figure 4
From: Determination of individual contact interfaces in carbon nanotube network-based transistors
(a) Individual R S and R D values extracted from 11 CNT-TFTs for different densities of CNTs in the network. (b) Measured |(R D  − R S )|/(R D  + R S ) of CNT-TFTs for different densities of CNTs. (c) R S and R D values of CNT-TFTs extracted with external resistance (R add ) intentionally loaded source and drain electrodes. (d) Simulated asymmetric ratio of |(A D  − A S )|/(A D  + A S ) of CNT-TFTs for different densities and lengths of CNTs. (e) Simulated distribution of contact resistance for high and low densities of CNTs in the network.
