Figure 3
From: Carrier dynamics of Mn-induced states in GaN thin films
(a) The transient transmission changes of the probe pulses through the Mn-doped GaN with concentrations of 1.1 × 1019 cm−3. The pump/probe wavelength (photon energy) is 820 nm (1.5 eV). (b) The schematic diagram illustrates the density of states in Mn-doped GaN. The slow response in (a) is associated with carrier dynamics in the Mn IB states monitored by the 1.5 eV probe pulses.
