Figure 4
From: Carrier dynamics of Mn-induced states in GaN thin films

The transient transmission changes of the probe pulses through the Mn-doped GaN with concentrations of 1.2 × 1020 cm−3. The pump/probe wavelength (photon energy) is 820 nm (1.5 eV). They were monitored by the probe pulses in different experimental setups for (a) short and (b) long observation windows.