Figure 5
From: Carrier dynamics of Mn-induced states in GaN thin films
(a) The transient transmission changes of the probe pulses through Mn-doped GaN with concentrations of 1.2 × 1020 cm−3. The pump/probe energy is 3.0/1.5 eV (410/820 nm). (b) The schematic diagram illustrates the carrier dynamics in the bandtail states monitored by the two-photon absorption of the 1.5 eV probe pulses. The monitor efficiency is dramatically reduced when the intermediate states become virtual states for two-photon absorption.
