Figure 1
From: Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film
In situ heating crystallization of as deposited Ge2Sb2Te5 thin film. (a–d) bright-field transmission electron microscopy images and the corresponding selected area electron diffraction (SAED) patterns at different temperatures (25 °C, 150 °C, 210 °C, and 270 °C, respectively). (e) The coexistence of a large hexagonal (h-) grain and small grains on the other side of the grain boundary at 320 °C. (f) The final morphology and its corresponding SAED pattern of the large single-crystal type h-grain with strong [0001] texture.
