Figure 5
NM HEMT on SiO2/Si. (a) The SEM image of a device with two separate 25 µm × 4 µm channels. Electrodes are colored and labeled. I-V is measured with one channel. (b) IG-VG of the Schottky gate in linear (black) and logarithmic (red) scales. (c) ID-VD at different gate bias from −3 V to 2 V, with step of 0.5 V. (d) Transfer characteristics (ID-VG) with VD of 4 V (red curve). Measured transconductance gm is also shown in black.
