Figure 1

DC electrical characterization. R × A and TMR values extracted from the measured transfer curves in a 4-point contact geometry (red triangles correspond to S1 with t CoFeB = 2.0 nm and the blue circles to S2 with t CoFeB = 1.4 nm). (a) R × A of the measured MTJs and CIPT (of sample S1) measurements along the wafer position (green line) (b) TMR vs. R × A measured for the full collection of 200 nm MTJ pillars.