Figure 6 | Scientific Reports

Figure 6

From: Graphene Enhanced Secondary Ion Mass Spectrometry (GESIMS)

Figure 6

Static SIMS mode measurement for Sb dopant in Si substrate for samples with various dopant concentration: 1 * 1018 and 1 * 1016  atoms/cm 3 for Sample A and B, respectively. The presence of the graphene layer significantly increases the intensity of the SIMS signal, improving the detection limit. The GESIMS method allows the analysis of samples with low concentration, which is not possible using the standard measurement.

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