Figure 2
From: Te-based chalcogenide materials for selector applications
GeTe6 switching characteristics for a 135 nm device. (a): Average of 100 DC alternate polarity cycles. (b): Cell resistance in both HRS and LRS after each cycle. The reading voltage was 1.4 V (as suggested by the dashed red and blue lines). (c): Distribution of V th (blue) and V h (red) for both positive and negative polarities. (d): Average of 50 single polarity (positive) sweeps followed by a negative sweep. Inset: ON/OFF resistance ratio.
