Figure 6

Symmetric and asymmetric STT voltage dependence at \(T=250\) mK (a) and \(T=300\) K (b), respectively. The bottom barrier width is fixed, \({L}_{2}=1.0\) nm. Curves 1–3 correspond to symmetric \({L}_{1}=1.0\) nm and asymmetric \({L}_{2}=0.9\) nm, \({L}_{1}=0.8\) nm cases for \({d}_{{\rm{av}}}=2.63\) nm, respectively.