Figure 2 | Scientific Reports

Figure 2

From: Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects

Figure 2

Influence of B on the SiO2 viscosity. EFTEM cross-section images of 1100 °C-annealed 10-bilayer 4-nm-SRO:B/2-nm-SiO2 SLs, filtered around the Si-plasmon loss energy. The layered structure is well preserved for the lowest and the medium B-concentration but the NC-stacking order is less clearly pronounced for the highest B-concentration. Obviously, the threshold for SL-preservation and thereby for NC size-control is slightly above 1 at% B.

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