Figure 4 | Scientific Reports

Figure 4

From: Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects

Figure 4

Luminescence Quantum Yield of B-incorporating Si NCs. The ratio of emitted photons (at PL peak) and absorbed photons (410 nm excitation) of H2-passivated, 4.5 nm Si NC samples decreases almost linearly with increasing B-concentration. The solid line is a linear fit with a slope of approximately −0.6, i.e., for NCs grown from SRO:B with 1 at% the QY is quenched by 60% relative compared to an intrinsic sample.

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