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Figure 2

From: Preparation of CH3NH3PbI3 thin films with tens of micrometer scale at high temperature

Figure 2

XRD patterns of (a) PbI2 film grown by PLD and (b) MAPbI3 thin film prepared at 180 °C for 25 min. (c) The PL and absorption spectra of the MAPbI3 thin film with photos of samples (the left is the PbI2 thin film and the right is the corresponding fabricated MAPbI3 thin film). (d) XRD pattern of PbO thin films reacted in resistance furnace at 220 °C for 0 minutes, 20 minutes and 60 minutes, respectively.

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