Figure 1
From: Probing charge transfer between molecular semiconductors and graphene
Experimental setup: (a) layout of the HWE setup. The scheme of the sample (marked by an orange circle) is enlarged in (b) showing upside-down the graphene FET with the in-situ DC electrical characterization scheme. (c) Graphene’s dispersion relation. E F0 and E F1 indicate the position of the Fermi level (with respect to the Dirac point) before and after epitaxy, while ΔE F indicates the shift of graphene’s Fermi level. (d) AFM topography image of one of the devices used in the study after the deposition of a sub-monolayer of 6P (z scale 50nm). Dashed lines in (d) highlight the rims of the graphene flake. L and W mark channel length and width. (e) Area exhibiting a step-edge between graphene and SiO2, indicated in (d) by a square and rotated by 90° with respect to (d) (z scale 25 nm). (f) A height cross section along the dashed line in (e) is shown (top), with a corresponding layout of the structure (bottom).
