Figure 3
From: Formation of a-plane facets in three-dimensional hexagonal GaN structures for photonic devices
Cross-sectional view SEM images of inner TAP semi-polar {\(11\bar{2}2\)} facets and the TP edge between {\(10\bar{1}1\)} facets of (a) sample A, and (b) sample C. (c) High magnification SEM images of sample A, and (d) sample C. The yellow guideline in (b) indicates the growth front of sample A. (e) Cross-sectional schematic representing the time evolution of inner TAP semi-polar {\(11\bar{2}2\)}, and TP edge {\(10\bar{1}1\)} facets. (Scale bars: 0.5 μm).
