Figure 3
Quasi-static and high-frequency (100 Hz‒1 MHz) C–V characteristics of the HfO2/Al2O3 dielectrics on (a,b) p-type and (c,d) n-type In0.53Ga0.47As substrates after PMA at 400 °C for 30 min: (a,c) FGA and (b,d) H2-HPA.
Figure 3 | Scientific Reports
