Table 1 Specifications of the In0.53Ga0.47As/InP wafers used in this experiment.
Substrates | Layers | Thickness (nm) | x | Dopant | Doping conc.(cm−3) |
|---|---|---|---|---|---|
p-type In1−x Ga x As on p+ InP | In1−x Ga x As | 100 | 0.53 | Be | 5 × 1017 |
In1−x Ga x As | 150 | 0.53 | Be | 1 × 1017 | |
p+ InP | 650,000 | — | Zn | 2 × 1018 | |
n-type In1−x Ga x As on n+ InP | In1−x Ga x As | 150 | 0.53 | Si | 5 × 1017 |
In1−x Ga x As | 100 | 0.53 | Si | 1 × 1017 | |
n+ InP | 650,000 | — | S | 3 × 1018 |
