Figure 2
From: Dielectric collapse at the LaAlO3/SrTiO3 (001) heterointerface under applied electric field
Ti 2p core-level spectra of LaAlO3/SrTiO3 heterostructures without bias gate voltage. The relative binding energy is given with respect to the Ti 2p core-level spectra of a bare SrTiO3 substrate as reference (black line). λ is the probing depth controlled by photon energy and emission angle; λ = 1.6 and 10 nm are obtained by HAX-PES (hν = 7.9 keV) with θ = 80 and 0 degrees, respectively, while others (λ = 2.0, 1.4 and 1.0 nm) are SX-PES (hν = 1.2 keV) results with varied angles at θ = 0, 45, and 60 degrees, respectively.
