Figure 4
From: Dielectric collapse at the LaAlO3/SrTiO3 (001) heterointerface under applied electric field
The calculated self-consistent potential and carrier density profiles. (a) Simulated potential depth profiles of the electron gas, for V g = 0 and −50 V. Inset of Fig. 4(a) shows the magnification around the interface. (b) Self-consistent carrier profile and (c) the resultant ε r(\(z)\) for V g = 0 and −50 V. The inset of Fig. 4(c) shows the comparison between the extracted form of ε r(\({\mathbb{E}}\)) (symbols and dashed line) and the reported ε r(\({\mathbb{E}}\)) (solid line)27. Measured and simulated SX-PES and HAX-PES Ti 2p core-level spectra for (d) V g = 0 V, and (e) V g = −50 V. Open circles are the experimental data, and solid lines are the best-fit simulations. Dashed lines correspond to the Ti 2p core-level spectrum of a bare SrTiO3 substrate. (f) The calculated electric displacement field from the inset of Fig. 4(c). Solid line is calculated by fitting the extracted form of ε r(\({\mathbb{E}}\)) in the inset of Fig. 4(c) using a sigmoid function.
