Table 1 Materials, input parameters, source references and derived values of λ(0), the normalized surface current density, \({J}_{s}^{n}\), and normalized surface field, \({B}_{s}^{n}\), at self-field critical current for all data points in Fig. 5.

From: Universal scaling of the self-field critical current in superconductors: from sub-nanometre to millimetre size

Material	2a (nm)	2b (nm)	κ (expt)	λ(0)(expt) (nm)	J _c(0)(MA/cm²)	λ(0)(derived) (nm)	\({J}_{s}^{n}\)	\({B}_{s}^{n}\)	(b/λ)
FeSe (single-atom-layer)	1.5 mm	0.55	72¹⁰	324¹⁰	1.65⁹	336	0.897	0.000762	0.00085
TaS₂ (exfoliated)	450	4.2	11 ± 2	338 ± 143	0.62¹¹	394	0.631 ± 0.45	0.00391 ± 0.0004	0.0062 ± 0.002
			13.6, 12.1¹⁶	410¹⁷
			9.8¹⁵	302, 260¹⁶
			9.5¹⁴	613¹⁴
PbMo₆S₈(round-wire)	160 μm	—	125¹³	275¹³	0.0216¹²	284	0.936	0.936	291
NbN (film)	8.9 μm	8	40⁷	194³²	7.9³³	193.5	1.0076	0.0208	0.0206
	300	8		200⁷	14.3³³	191.5	1.035	0.0213	0.0206
	6.0 μm	22.5		200⁷	7.47³⁴	198.6	0.9348	0.0541	0.058
Al (Thin film) (nanowires)	610	89	0.03⁷	50 ± 10³⁵	4.44²¹	49.3	1.0368	0.738	0.89
	680	98			3.38²¹	53.8	0.831	0.625	0.98
	500	34			3.82²¹	55.8	0.859	0.281	0.34
	300	20			3.68²¹	59.3	0.628	0.124	0.20
	10	5			9.23³⁶	49.3	1.040	0.0520	0.05
	8.4	5			7.94³⁶	51.9	0.8944	0.0447	0.05
Ba(Fe, Co)₂As₂	500 μm	500 μm	90³⁷	284 ± 15^37,38,39	0.0078⁴⁰	259	1.201	1.201	880
Ba(Fe, Co)₂As₂	6.7 μm	220	90³⁷	284 ± 15^37,38,39	2.19⁴¹	316	0.738	0.273	0.387
Nb	82 μm	1 μm	1⁴²	49 ± 6^43,44,45	5.12⁴⁶	50.9	0.928	0.928	10.2
Nb	49 μm	1 μm	1⁴²	49 ± 6^43,44,45	5.92⁴⁶	51.2	1.064	1.064	10.2
YBa₂Cu₃O_y	500 μm	850	95⁷	125¹⁸	31.8⁵	122.6	1.040	1.037	3.4
	500 μm	1.4 μm			26^{47, 48}	124.3	1.011	1.011	5.6
	50 μm	50			30⁴⁹	131	0.897	0.177	0.2
	5.0 μm	150			28.9⁵⁰	134	0.902	0.484	0.6
(STI tape)	500 μm	4.5 μm		137 (22 K)	10.6⁴⁸	138	0.984	0.984	16.4
(single xtal)	2 mm	30 μm		125¹⁸	2.04³⁰	123	1.032	1.032	120
(single xtal)	2 mm	30 μm		125¹⁸	1.50³⁰	143	0.761	0.761	120
Nb₃Sn	101 μm	—	22⁷	65⁷	0.56⁵¹	57.7	1.27	1.27	777
(cyl)	94 μm	—			0.46⁵¹	66	0.972	0.972	723
(film)	150 μm	36 μm			0.761⁵¹	65.2	0.992	0.992	277
(commercial)	1.3 cm	8.5 μm			2.59⁵²	65.4	0.9904	0.9904	65.4
(commercial)	1.3 cm	5.76 μm			4.58⁵²	59.7	1.186	1.186	44.3
MgB₂	320	10	26⁵³	90^{54, 55}	121⁵⁶	84.9	1.171	0.065	0.0555
	5 μm	10			78.2⁵⁷	86.7	1.119	0.0621	0.0555
	350	100			84.1⁵⁸	94.2	0.889	0.448	0.556
	1.2 mm	200 μm			0.085⁵⁹	82.2	1.376	1.376	1216
In	360	100	0.11⁷	40⁷	41.1⁶⁰	34.1	1.163	0.987	1.25
(round-wire)	520 μm	—			0.0105⁶¹	39.1	1.072	1.072	3250
	270 μm	—			0.0211⁶¹	38.5	1.119	1.119	1688
	170 μm	—			0.036⁶¹	37.6	1.202	1.202	1063
	170 μm	—			0.0347⁶¹	38.1	1.158	1.158	1063
MoN (round)	160	—	54⁶²	440 ± 40⁶⁴	0.5923⁶³	463	0.8676	0.156	0.1818
MoGe	10 μm	200	94 ± 14^{65, 66}	400⁶⁷	1.75⁶⁵	332–339	1.731	0.424	0.25
	20 μm	200			1.31⁶⁵	366–373	1.296	0.317	0.25
	25 μm	200			1.13⁶⁵	384–392	1.118	0.274	0.25
	30 μm	200			1.04⁶⁵	395–403	1.029	0.252	0.25
	40 μm	200			1.02⁶⁵	397–405	1.009	0.247	0.25
H₂S (155 GPa)	80 μm	650 (est)	88⁶⁸	163⁶⁸	10.3⁶⁸	189	0.682	0.657	1.99

The column for (b/λ) refers to films while for cylindrical samples refers to (a/λ).

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Table 1 Materials, input parameters, source references and derived values of λ(0), the normalized surface current density, \({J}_{s}^{n}\), and normalized surface field, \({B}_{s}^{n}\), at self-field critical current for all data points in Fig. 5.

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