Figure 6

Transfer characteristics of ZnO-TFT embedded with NAu-rGO nanocomposite with respect to programming time. (a) Writing characteristics and (b) erasing characteristics. (c) Schematic diagram band gap diagram of ZnO-TFT-based non-volatile memory device embedded with NAu-rGO nanocomposite without applying electric field. (d) Programming state. (e) Erasing state.