Figure 3
From: Forming-less and Non-Volatile Resistive Switching in WOX by Oxygen Vacancy Control at Interfaces
Chemical and structural analysis of WOX; (a) XPS narrow scan of W 4f at the surface which was peak-deconvoluted with sub-peaks for each chemical binding state, (b) O 1s XPS of WOX, (c) cross-sectional TEM image and depth-wise EELS analysis which indicates OK1 edge spectra with onset energies (solid arrows) and secondary onset energies (dotted arrows), (d) SEM image of Pt/WOX/Au device, (e) XRD data of amorphous WOX on Au substrate, (f) Raman data of amorphous WOX measured using 532-nm laser excitation, (g) AFM image of surface of WOX device, (h) XPS valence band maximum of WOX device as determined by spectrum onset binding energy, and (i) band gap determination of WOX device throughout UV-vis measurement; the oscillation in the spectra from 1.2 to 3 eV is due to the internal optical interference pattern. The intrinsic absorption starts from around 3 eV near the band gap energy of WO3.
