Figure 2
From: Closing the bandgap for III-V nitrides toward mid-infrared and THz applications

Formation energy of (a) ZB and (b) WZ-InN1−xBix as a function of chemical potential difference of N and Bi.
From: Closing the bandgap for III-V nitrides toward mid-infrared and THz applications

Formation energy of (a) ZB and (b) WZ-InN1−xBix as a function of chemical potential difference of N and Bi.