Figure 5
From: Closing the bandgap for III-V nitrides toward mid-infrared and THz applications

Electronic band structures of InN1−xBix in ZB and WZ phases for x = 0, 1.5625%, 3.125% and 6.25% with MBJLDA potential.
From: Closing the bandgap for III-V nitrides toward mid-infrared and THz applications

Electronic band structures of InN1−xBix in ZB and WZ phases for x = 0, 1.5625%, 3.125% and 6.25% with MBJLDA potential.