Table 3 Calculated bandgap (E g /eV), the value of Г- Г (eV) and characteristics of InNBi with increasing Bi composition in ZB and WZ phases.
From: Closing the bandgap for III-V nitrides toward mid-infrared and THz applications
x | ZB | WZ | ||||
|---|---|---|---|---|---|---|
E g | Г- Г | Characteristic | E g | Г- Г | Characteristic | |
0 | 0.757 | 0.757 | direct band gap | 0.818 | 0.818 | direct band gap |
0.015625 | 0.078 | 0.201 | indirect band gap | −0.028 | 0.084 | semi-metal |
0.03125 | 0.000 | 0.000 | semi-metal | −0.041 | — | semi-metal |
0.0625 | 0.041 | 0.064 | indirect band gap | — | — | metalized |
0.125 | — | — | semi-metal | — | — | metalized |
0.25 | 0.218 | — | indirect band gap | — | — | metalized |
0.50 | — | — | metalized | — | — | metalized |
0.75 | — | — | metalized | — | — | metalized |
1.00 | — | — | metalized | — | — | metalized |
