Figure 1 | Scientific Reports

Figure 1

From: Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction

Figure 1The alternative text for this image may have been generated using AI.

Antiphase domains in GaP on Si substrates. (a) Ball and stick model illustrating the formation and annihilation of antiphase boundaries (APBs) in GaP grown on a (001) Si, (1.) APBs parallel to (110) due to sub-lattice occupation disorder, (2.) APBs along the {111}Si due to monoatomic steps, (3.) annihilation of APBs along (111) and (110) and (4.) annihilation of APBs due to diatomic steps. (b) Plan-view secondary electron image and (c). Plan-view backscattered electron image both acquired at a sample tilt of 70° from the same region of the surface of a 70 nm GaP film grown on an (001) Si substrate (miscut < 0.1°). The inset shows areas marked with a red dot and a purple dot which may well be regions with two orientations corresponding to a difference in the location of cation atoms (eg. Ga) and anion atoms (P) in the two sub-lattices as expected in the case of APDs.

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