Figure 1

(a) Schematic of the gated p⁺-i-n⁺ Si UTB transistor (left-hand-side panel) and Scanning electron microcopy image of the patterned Si UTB channel (scale bar: 2 μm) (right-hand-side panel), (b) NDT characteristics in I_D-V_G curves of the gated p⁺-i-n⁺ Si UTB transistor, (c–h) Energy band diagrams at various bias conditions, representing a possible transport mechanism of the NDT characteristics in the gated p⁺-i-n⁺ Si UTB transistor: (c) thermal equilibrium, (d) V_D1 > 0 and V_G1 = 0 V, (e) V_D1 > 0 and V_G2 < 0 V, (f) V_D1 > 0 and V_G3 ≪0 V, (g) V_D1 > 0 and V_G4 ≪<0 V, and (h) V_D1 > 0 and V_G5 > 0 V. E_c, E_v, and E_F labeled in each band diagram denote the conduction band minimum, the valence band maximum, and the Fermi level, respectively.