Figure 2
From: Difference in gating and doping effects on the band gap in bilayer graphene
Comparison of altered transport properties after F4TCNQ deposition. (a,b) Conductivity as a function of bottom gate voltage and its temperature dependence. Conductivity curves are shown for t = 0 and t = 0.2 Å; t = 0 refers to ‘before deposition of F4TCNQ’, while t = 0.2 Å to ‘after deposition of 0.2 Å thick F4TCNQ’. The gate voltage was swept from the negative to the positive value, with no hysteresis observed for either sweep direction. (c,d) Arrhenius plots of the minimum conductivity evaluated from (a) and (b). The solid lines are fitting curves using equation (2). (e,f) Temperature dependence of ON/OFF ratio is shown for t = 0 and t = 0.2 Å. The ON/OFF ratio is defined as σ(V n + 45 V)/σ(V n), and evaluated from (a and b). The solid lines are guides to the eye. All graphs in (a,c and e) are based on sample A1, and those in (b,d and f) are based on sample B1.
