Figure 1
From: Growth-Induced In-Plane Uniaxial Anisotropy in V2O3/Ni Films

(a) High-angle θ-2θ x-ray diffraction pattern of V2O3 (100 nm)/Ni (10 nm) sample, misaligned by 0.1° to suppress the substrate peaks. The V2O3 (012), (024), and (036) peaks are identified by *, the Ni (111) identified by †, and sapphire (012) and (024) identified by ‡. (b) Reciprocal space map of V2O3 recorded along the long edge of the substrate. The (012) plane is parallel to the surface at Q || = 0, while the (104) points 48° to the surface normal. (c) Pole figure of the (104) plane showing the epitaxy of V2O3. The (\(01\mathop{4}\limits^{\bar{} }\)) lies at 82° with respect to the surface normal. (d) Schematic reconstruction of the real space orientation of the V2O3 crystal planes following from symmetry considerations of the measured planes.