Figure 9
From: Electron tunneling through double magnetic barriers in Weyl semimetals
The magnetoresistance ratio MR as a function of the incident energy E F in the presence of a double square-shaped magnetic/electric barrier, for d = 26 nm, L = 3d, B = 1 T, V 2 = V 4 = 0, V 3 = 0. (b) The same as panel (a) but for B = 3 T. (c–f) The dependence on the incident energy of the MR in the presence of a double delta-function-shaped barrier, for d = 26 nm, L = 3d, (c) B = 1 T, V 3 = 0; (d) B = 1 T, V 3 = 32 meV; (e) B = 3 T, V 3 = 0; (f) B = 3 T, V 3 = 32 meV.
