Figure 2
From: Structural evolution of tunneling oxide passivating contact upon thermal annealing
(a) The depth profile analysis of the thin film black surface field’s hydrogen concentration measured by secondary ion mass spectrometry at the as-deposited state and after annealing at 600 °C for one and five minutes, respectively, and (b) its zoom-in of the interface region between the a-Si:H and SiOx layers.
