Figure 4
From: Structural evolution of tunneling oxide passivating contact upon thermal annealing
The cross-sectional transmission electron microscopy images of the thin film back surface field in the as-deposited state and annealed at 600 °C for one and five minutes. (a) As-deposited. (b) Zoom into the interface region (a). (c) Annealed at 600 °C for one minute. (d) Zoom into the interface region (c). (e) Annealed at 600 °C for five minutes. (f) Zoom into the interface region (e). Porous interface region (marked by arrows) is observed underneath of c-Si wafer surface, at c-Si/SiO2 interface after annealed at 600 °C for both one and five minutes.
