Figure 5
From: Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection

(a) PL of the 4H-SiC layer at different temperatures ranging from 84 K to 203 K after neutron irradiation with fluence of 7.29 × 1014 cm−2; (b) the variation of the peak intensity of the PL spectra at different temperatures before (black open blocks) and after neutron irradiation (blue open circles with neutron radiation fluence of 1.31 × 1014 cm−2 and blue open up-triangles with neutron radiation fluence of 7.29 × 1014 cm−2) and the position of the PL peaks after irradiated by neutrons (brown open stars) with fluence of 7.29 × 1014 cm−2 at different temperatures.