Figure 3

Coulomb oscillations in the presence of a magnetic field. (a) Selection of four representative source-drain currents \({I}_{SD}\) vs \({n}_{G}\) recorded at different \({V}_{SD}\) for two magnetic flux values. Green(brown) lines correspond to \({{\rm{\Phi }}}_{B}/{{\rm{\Phi }}}_{0}=0.51\)(\(1.33\)). These two flux conditions are highlighted by arrows with corresponding color on top of panel (c). (b) Electrical transconductance characteristics \({g}_{m}=\partial {I}_{SD}/\partial {V}_{G}\) vs \({n}_{G}\) recorded for selected values of \({V}_{SD}\) at \({{\rm{\Phi }}}_{B}/{{\rm{\Phi }}}_{0}\mathrm{=1.33}\). c–f, Contour plot of source-drain current \({I}_{SD}\) vs \({{\rm{\Phi }}}_{B}\) and \({n}_{G}\) for selected values of \({V}_{SD}\): 425 \(\mu \)V (c), 325 \(\mu \)V (d), 225 \(\mu \)V(e), and 125 \(\mu \)V (f). These plots show how the magnetic flux can influence the energy scale in which the transistor is sensitive to gate voltage variations. All measurements were taken at 21 mK of bath temperature.