Figure 3
From: Impact of Wide-Ranging Nanoscale Chemistry on Band Structure at Cu(In, Ga)Se2 Grain Boundaries
Composition and band profiles from two representative grain boundaries. The errors for the different elements are ±0.2 at.% Cu, ±0.1 at.% In, ±0.3 at.% Se, ±0.07 at% Ga, ±0.04 at. %K, and ±0.03 at.% Na. The maximum errors for the band profiles are ±1.5 meV VBM, ±4.5 meV CBM, and ±5.5 meV band gap.
