Table 1 Device characteristics of the solar cell used for APT analysis.
From: Impact of Wide-Ranging Nanoscale Chemistry on Band Structure at Cu(In, Ga)Se2 Grain Boundaries
Eff (%) | 20.3 |
Jsc (mA/cm 2) | 35.2 |
FF (%) | 80.2 |
Voc (mV) | 718 |
From: Impact of Wide-Ranging Nanoscale Chemistry on Band Structure at Cu(In, Ga)Se2 Grain Boundaries
Eff (%) | 20.3 |
Jsc (mA/cm 2) | 35.2 |
FF (%) | 80.2 |
Voc (mV) | 718 |
