Figure 1 | Scientific Reports

Figure 1

From: A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels

Figure 1

(a) Molecular structures of the triblock copolymer (PS-PMMA-PS) and ionic liquid ([EMIM][TFSI]) used for preparation of ion-gel film. (b) Schematic and (c) optical micrograph of the two-terminal device for characterization of electrical properties of hybrid dielectrics. (d) Current–voltage characteristics of hybrid dielectrics with various Al2O3 layer thicknesses. Inset: log-scale plot. (e) The variation of current density measured at 1 V as a function of Al2O3 layer thickness.

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