Figure 2 | Scientific Reports

Figure 2

From: A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels

Figure 2

(a) J–V characteristics of ion gel film without passivation and with 3-nm-thick Al2O3 passivation layer, measured from room temperature to 100 °C. (b) Temperature-dependent current density of hybrid structure with various thicknesses of Al2O3 passivation layer, measured at 3 V bias. Inset: log-scale plot. (c) Schematics of current mechanism at metal–ion gel and metal–Al2O3–ion gel interfaces.

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