Figure 4
From: 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering
(a) Diffraction pattern of the AlN/sapphire interface. (b) Cross-sectional bright-field TEM image of the AlN structure/NPSS. TEM images with a two-beam condition along (c) g = 0002 and (d) g = 1–100.
