Figure 7
From: 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering
PL spectra of (a) structure A and (b) structure B under RT and LT.
Figure 7 | Scientific Reports
From: 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering
PL spectra of (a) structure A and (b) structure B under RT and LT.
