Figure 2 | Scientific Reports

Figure 2

From: Ferroelectric thin film acoustic devices with electrical multiband switching ability

Figure 2

Schematic of film bulk acoustic wave resonator with one BSTO layer, and displacement profile (η(x)) for first normal acoustic mode (a). Frequency dependence of the impedance of the BSTO FBAR at different bias field voltages7 (b), (reproduced from I. B. Vendik, P. A. Turalchuk, and O. G. Vendik, Journal of Applied Physics 103, 014107 (2008) with the permission of AIP Publishing); multilayer thin film FE structure with conductive electrodes between layers (c).

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