Figure 2 | Scientific Reports

Figure 2

From: Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration

Figure 2

Cross sectional STEM analysis of an as grown 33 nm thick epitaxial InAs layer in a wide-field of micrometer size on a Si(111) substrate. (a) Low resolution TEM image of an approximately 1 μm long section providing an overview of the investigated epitaxial structure including STI and Si substrate showing an undulation free InAs surface. (b) Individual HR-STEM images of 9 adjacent segments are acquired with high resolution, the complete image is assembled, and the image is scaled along the lateral axis by a factor of 3 and maintaining the vertical scale to obtain a publishable size image while simultaneously preserving image information. The length of the assembled section is about 340 nm demonstrating the crystallographic quality of an extended region. The rounded shape at the edge of the epitaxial layer is a typical observation. (c) Original size HR-STEM image of one of the segments in (b).

Back to article page