Figure 5

Transfer and output characteristics of NW FET with a 4–5 nm high InAs channel directly grown on Si(100). (a) Peak transconductance g _m = 1,700 μS/μm, subthreshold swing SS = 114 mV/dec, and Q = g _m/SS of 15.4 are measured for L _g of 70 nm at V _ds = 0.5 V.