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Figure 1

From: Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates

Figure 1

The process flow of the heterogeneous integration of GaN with Si(100) substrates using the ion-cutting method. (a) Implanting H ions in the bulk GaN wafer; (b) Cleaning and bonding GaN with Si(100) handle wafer; (c) Annealing and transferring the GaN film on the Si(100) substrate; (d) Post annealing to enhance the bonding strength and to recover the implantation-induced damage. (e) Schematic diagram of the die-to-wafer heterogeneous integration of GaN and Si(100) devices.

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