Figure 3
From: A Silk Fibroin Bio-Transient Solution Processable Memristor
Electrical characteristics of the silk fibroin memristive device. Measured IV characteristics of the crossbar memristive device fabricated on a glass substrate and a PVA substrate (centre). The Pt electrodes are set at 0 V and the Au electrodes are subjected to a ± 5 V, 1 Hz triangle voltage waveform with a current compliance of 1 µA at room temperature. Photograph of a Au-Silk Fibroin-Pt crossbar memristive device on a glass substrate (left). Photograph of a free-standing Au-Silk Fibroin-Pt crossbar memristive device on a PVA substrate (right).
