Figure 3
From: A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO2/Si structure
I–V characteristics of the structure with a spot laser (P = 2 mW) illuminating on different surface positions of (a) n-type Mn-doped ZnO film (b) Si Substrate surface. Enlarged view of switching process with laser illuminating on film surface (c) and (d) substrate.
